On the basis of a parabolic potential profile around the source-channel junction barrier of nanoscale MOSFETs, a new compact model is physically derived, which links the width of thermal energy kappa T-B layer (a critical zone in the context of the backscattering theory) to the geometrical and bias parameters of the devices. The proposed model is supported by experimental data and by a critical analysis of various simulation works presented in the literature. The only fitting parameter remains constant in a wide range of channel length (10-65 nm), gate voltage (0.4-1.2 V), drain voltage (0.2-1.2 V), and temperature (100 K-500 K). The confusing temperature-dependent issues in the open literature are straightforwardly clarified.
- backscattering; MOSFET; nanometer