A parabolic potential barrier-oriented compact model for the kappa T-B layer's width in nano-MOSFETs

Ming-Jer Chen, Li-Fang Lu

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

On the basis of a parabolic potential profile around the source-channel junction barrier of nanoscale MOSFETs, a new compact model is physically derived, which links the width of thermal energy kappa T-B layer (a critical zone in the context of the backscattering theory) to the geometrical and bias parameters of the devices. The proposed model is supported by experimental data and by a critical analysis of various simulation works presented in the literature. The only fitting parameter remains constant in a wide range of channel length (10-65 nm), gate voltage (0.4-1.2 V), drain voltage (0.2-1.2 V), and temperature (100 K-500 K). The confusing temperature-dependent issues in the open literature are straightforwardly clarified.
Original languageEnglish
Pages (from-to)1265-1268
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume55
Issue number5
DOIs
StatePublished - May 2008

Keywords

  • backscattering; MOSFET; nanometer

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