A one-chip isolated gate driver with Drive-by-Microwave technologies

Shuichi Nagai*, Noboru Negoro, Takeshi Fukuda, Nobuyuki Otsuka, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

We have developed new isolated gate drivers using what we call Drive-by-Microwave technology that enables wireless power transmission of input signals. In order to realize the compactness of the gate driver and to obtain isolated gate signals with enough power to directly drive the switching power devices, we have developed a novel compact butterfly-shaped electro-magnetic resonant coupler (EMRC) that operates with RF converted input signals at 5.8GHz. By integrating this EMRC, one-chip GaN isolated gate driver ICs on a sapphire substrate have been developed and their direct driving of the GaN-GIT power switching devices was successfully demonstrated.

Original languageEnglish
Title of host publicationProceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012
Pages165-167
Number of pages3
DOIs
StatePublished - 1 Dec 2012
Event2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012 - Singapore, Singapore
Duration: 21 Nov 201223 Nov 2012

Publication series

NameProceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012

Conference

Conference2012 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2012
CountrySingapore
CitySingapore
Period21/11/1223/11/12

Keywords

  • Driver circuits
  • Electromagnetic coupling
  • GaN-HFET
  • Microwave technology
  • Power semiconductor switches
  • Sapphire substrate

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