A one-chip isolated gate driver with an electromagnetic resonant coupler using a SPDT switch

Shuichi Nagai*, Takeshi Fukuda, Nobuyuki Otsuka, Daisuke Ueda, Noboru Negoro, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations

Abstract

The isolated direct gate driver with Drive-by-Microwave technologies can directly drive a power switching device by wireless power transmission of RF modulated signal through the electromagnetic resonant coupler and requires no additional isolated voltage source. In order to improve the performance such as a fall time characteristic and a power consumption of the gate driver, a new direct gate driver using a SPDT switch is proposed, which can effectively switch the inter-channels for the positive and negative voltage outputs. The fabricated GaN single-chip direct gate driver realized 2.0Mbps signal isolation and successfully drove a GaN power switching device with a very fast fall time by the negative voltage output for off-state.

Original languageEnglish
Title of host publicationProceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
Pages73-76
Number of pages4
DOIs
StatePublished - 8 Aug 2012
Event24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 - Bruges, Belgium
Duration: 3 Jun 20127 Jun 2012

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
CountryBelgium
CityBruges
Period3/06/127/06/12

Keywords

  • electromagnetic resonant coupler
  • GaN HFET
  • gate driver
  • power device
  • Sapphire
  • SPDT switch

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    Nagai, S., Fukuda, T., Otsuka, N., Ueda, D., Negoro, N., Sakai, H., Ueda, T., & Tanaka, T. (2012). A one-chip isolated gate driver with an electromagnetic resonant coupler using a SPDT switch. In Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 (pp. 73-76). [6229026] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2012.6229026