A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide- semiconductor structures

Yi-Ming Li*, Shao Ming Yu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations

Abstract

Numerical solution of the Schrödinger and Poisson equations (SPEs) plays an important role in semiconductor simulation. We in this paper present a robust iterative method to compute the self-consistent solution of the SPEs in nanoscale metal-oxide-semiconductor (MOS) structures. Based on the global convergence of the monotone iterative (MI) method in solving the quantum corrected nonlinear Poisson equation (PE), this iterative method is successfully implemented and tested on the single-, double-, and surrounding-gate (SG, DG, and AG) MOS structures. Compared with other approaches, various numerical simulations are demonstrated to show the accuracy and efficiency of the method.

Original languageEnglish
Pages (from-to)309-312
Number of pages4
JournalComputer Physics Communications
Volume169
Issue number1-3
DOIs
StatePublished - 1 Jul 2005
EventProceedings of the Europhysics Conference on Computational Physics 2004 CCP 2004 -
Duration: 1 Sep 20044 Sep 2004

Keywords

  • Monotone iterative method
  • Nanoscale MOS structures
  • Numerical iterative method
  • Quantum corrected Poisson equation
  • Schrödinger and Poisson equations

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