A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide- semiconductor structures

Yi-Ming Li; Shao Ming Yu

doi:10.1016/j.cpc.2005.03.069

A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide- semiconductor structures

Yi-Ming Li^*, Shao Ming Yu

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Contribution to journal › Conference article › peer-review

9 Scopus citations

Abstract

Numerical solution of the Schrödinger and Poisson equations (SPEs) plays an important role in semiconductor simulation. We in this paper present a robust iterative method to compute the self-consistent solution of the SPEs in nanoscale metal-oxide-semiconductor (MOS) structures. Based on the global convergence of the monotone iterative (MI) method in solving the quantum corrected nonlinear Poisson equation (PE), this iterative method is successfully implemented and tested on the single-, double-, and surrounding-gate (SG, DG, and AG) MOS structures. Compared with other approaches, various numerical simulations are demonstrated to show the accuracy and efficiency of the method.

Original language	English
Pages (from-to)	309-312
Number of pages	4
Journal	Computer Physics Communications
Volume	169
Issue number	1-3
DOIs	https://doi.org/10.1016/j.cpc.2005.03.069
State	Published - 1 Jul 2005
Event	Proceedings of the Europhysics Conference on Computational Physics 2004 CCP 2004 - Duration: 1 Sep 2004 → 4 Sep 2004

Keywords

Monotone iterative method
Nanoscale MOS structures
Numerical iterative method
Quantum corrected Poisson equation
Schrödinger and Poisson equations

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@article{94eba253429448af97fcb9f00d5ef9ed,

title = "A numerical iterative method for solving Schr{\"o}dinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide- semiconductor structures",

abstract = "Numerical solution of the Schr{\"o}dinger and Poisson equations (SPEs) plays an important role in semiconductor simulation. We in this paper present a robust iterative method to compute the self-consistent solution of the SPEs in nanoscale metal-oxide-semiconductor (MOS) structures. Based on the global convergence of the monotone iterative (MI) method in solving the quantum corrected nonlinear Poisson equation (PE), this iterative method is successfully implemented and tested on the single-, double-, and surrounding-gate (SG, DG, and AG) MOS structures. Compared with other approaches, various numerical simulations are demonstrated to show the accuracy and efficiency of the method.",

keywords = "Monotone iterative method, Nanoscale MOS structures, Numerical iterative method, Quantum corrected Poisson equation, Schr{\"o}dinger and Poisson equations",

author = "Yi-Ming Li and Yu, {Shao Ming}",

year = "2005",

month = jul,

day = "1",

doi = "10.1016/j.cpc.2005.03.069",

language = "English",

volume = "169",

pages = "309--312",

journal = "Computer Physics Communications",

issn = "0010-4655",

publisher = "Elsevier",

number = "1-3",

note = "null ; Conference date: 01-09-2004 Through 04-09-2004",

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TY - JOUR

T1 - A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide- semiconductor structures

AU - Li, Yi-Ming

AU - Yu, Shao Ming

PY - 2005/7/1

Y1 - 2005/7/1

N2 - Numerical solution of the Schrödinger and Poisson equations (SPEs) plays an important role in semiconductor simulation. We in this paper present a robust iterative method to compute the self-consistent solution of the SPEs in nanoscale metal-oxide-semiconductor (MOS) structures. Based on the global convergence of the monotone iterative (MI) method in solving the quantum corrected nonlinear Poisson equation (PE), this iterative method is successfully implemented and tested on the single-, double-, and surrounding-gate (SG, DG, and AG) MOS structures. Compared with other approaches, various numerical simulations are demonstrated to show the accuracy and efficiency of the method.

AB - Numerical solution of the Schrödinger and Poisson equations (SPEs) plays an important role in semiconductor simulation. We in this paper present a robust iterative method to compute the self-consistent solution of the SPEs in nanoscale metal-oxide-semiconductor (MOS) structures. Based on the global convergence of the monotone iterative (MI) method in solving the quantum corrected nonlinear Poisson equation (PE), this iterative method is successfully implemented and tested on the single-, double-, and surrounding-gate (SG, DG, and AG) MOS structures. Compared with other approaches, various numerical simulations are demonstrated to show the accuracy and efficiency of the method.

KW - Monotone iterative method

KW - Nanoscale MOS structures

KW - Numerical iterative method

KW - Quantum corrected Poisson equation

KW - Schrödinger and Poisson equations

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DO - 10.1016/j.cpc.2005.03.069

M3 - Conference article

AN - SCOPUS:21244442656

VL - 169

SP - 309

EP - 312

JO - Computer Physics Communications

JF - Computer Physics Communications

SN - 0010-4655

IS - 1-3

Y2 - 1 September 2004 through 4 September 2004

ER -

A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide- semiconductor structures

Abstract

Keywords

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