A novel two-step etching to suppress the charging damages during metal etching employing helicon wave plasma

Huang-Chung Cheng*, Wendy Lin, Tzong Kuei Kang, Yean Chyi Perng, Bau Tong Dai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A two-step etching has been performed to eliminate the plasma charging damages during helicon-wave plasma metal etching without selectivity loss. This technique utilized a normal etching recipe to remove the Al film and followed by an optimized etching recipe for the overetching step. By increasing the bias power and decreasing the source power, the optimum etching recipe can cause the plasma more directionally and reduce the Al charging damages. Eventually, the damage mechanism was also reported.

Original languageEnglish
Pages (from-to)183-185
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number6
DOIs
StatePublished - 1 Jun 1998

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