A Novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient

Ta-Hui Wang*, Chien Tai Chan, Chun Jung Tang, Ching Wei Tsai, Howard C.H. Wang, Min Hwa Chi, Denny D. Tang

*Corresponding author for this work

Research output: Contribution to journalArticle

42 Scopus citations

Abstract

A positive bias temperature instability (PBTI) recovery transient technique is presented to investigate trap properties in HfSiON as high-k gate dielectric in nMOSFETs. Both large- and small-area nMOSFETs are characterized. In a large-area device, the post-PBTI drain current exhibits a recovery transient and follows logarithmic time dependence. In a small-area device, individual trapped electron emission from HfSiON gate dielectric, which is manifested by a staircase-like drain current evolution with time, is observed during recovery. By measuring the temperature and gate voltage dependence of trapped electron emission times, the physical mechanism for PBTI recovery is developed. An analytical model based on thermally assisted tunneling can successfully reproduce measured transient characteristics. In addition, HfSiON trap properties, such as trap density and activation energy, are characterized by this method.

Original languageEnglish
Pages (from-to)1073-1079
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume53
Issue number5
DOIs
StatePublished - 1 May 2006

Keywords

  • HfSiON
  • High-k trap properties
  • Positive bias temperature instability (PBTI) recovery transient
  • Single electron emission
  • Thermally assisted tunneling

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