A Novel Three-Dimensional Submicron ZnO Inverter Technology with Refined Contact Design

Horng Chih Lin, Chin I. Kuan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Impact of source/drain contacts on the operation performance of three-dimensional (3-D) zinc-oxide (ZnO) logic inverters is explored in this work. The 3-D inverters consisting of a load vertically stacking on a driver were constructed with the film-profile-engineered (FPE) approach. Use of an ultra-thin ZnON contact layer is proposed and demonstrated to be effective in reducing the source/drain (S/D) series resistances (RSD) of the devices. From the material characterization, the improvement in the electrical characteristics is attributed to the suppression of an insulating interfacial oxide layer present at the contact interface which may impede the carrier transport. Measurement results of inverters indicate that the voltage gain can be improved from 9.7 V/V to 13.2 V/V as the scheme is implemented.

Original languageEnglish
Title of host publication17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728118536
DOIs
StatePublished - Jun 2019
Event17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Suzhou, China
Duration: 17 Jun 201919 Jun 2019

Publication series

Name17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

Conference

Conference17th IEEE International Conference on IC Design and Technology, ICICDT 2019
CountryChina
CitySuzhou
Period17/06/1919/06/19

Keywords

  • Film profile engineering (FPE)
  • inverter
  • oxide semiconductor
  • thin-film transistors (TFTs)
  • voltage gain
  • zinc oxynitride (ZnON)
  • zinc-oxide (ZnO)

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