A novel technology to reduce the antenna charging effects during polysilicon gate electron-cyclotron-resonance etching

Huang-Chung Cheng*, Tzong Kuei Kang, Tzun Kun Ku, Bau Tong Dai, Liang Po Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

A novel technique, which uses Cl2/O2 mixed gas in the electron cyclotron resonance (ECR) etching system, has been proposed to remove the antenna charging effect of the MOS capacitors with 5-nm-thick oxides during polysilicon gate etching. The Cl2/O2 can cause the trenching effect and prevents the gate oxide from the charging damage. Furthermore, the ECR system can provide high polysilicon/oxide selectivity so that the Si substrate under gate oxide is not directly bombarded by the ions. Consequently, the Ebd degradation of the MOS capacitors disappears as the trenching effect is apparent by using moderate Cl2/O2 mixed gas.

Original languageEnglish
Pages (from-to)338-340
Number of pages3
JournalIEEE Electron Device Letters
Volume17
Issue number7
DOIs
StatePublished - 1 Jul 1996

Fingerprint Dive into the research topics of 'A novel technology to reduce the antenna charging effects during polysilicon gate electron-cyclotron-resonance etching'. Together they form a unique fingerprint.

  • Cite this