A novel technique for profiling the lateral n- doping concentrations of submicron LDD MOS Devices

Steve S. Chung*, Mong Song Liang, S. M. Cheng, R. G.H. Lee, S. N. Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

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Chemical Compounds

Engineering & Materials Science