A novel surface passivation process for HfO 2 Ge MOSFETs

Nan Wu*, Qingchun Zhang, Chunxiang Zhu, Daniel S H Chan, M. F. Li, N. Balasubramanian, A. Y. Du, Albert Chin, Johnny K O Sin, D. L. Kwong

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel surface passivation method was developed for HfO 2 Ge MOSFETs using in situ SiH 4 treatment prior to HfO 2 deposition. Ge offers significant enhancements in bulk electron and hole mobility relative to silicon. Surface treatment using NH 3 nitridation of Ge is a key step in the demonstration of HfO 2 Ge MOSFETs. The incorporation of nitrogen at the HfO 2/Ge interface has the potential of degrading the channel mobility.

Original languageEnglish
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages19-20
Number of pages2
DOIs
StatePublished - 1 Dec 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: 21 Jun 200423 Jun 2004

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Conference

ConferenceDevice Research Conference - Conference Digest, 62nd DRC
CountryUnited States
CityNotre Dame, IN
Period21/06/0423/06/04

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    Wu, N., Zhang, Q., Zhu, C., Chan, D. S. H., Li, M. F., Balasubramanian, N., Du, A. Y., Chin, A., Sin, J. K. O., & Kwong, D. L. (2004). A novel surface passivation process for HfO 2 Ge MOSFETs. In Device Research Conference - Conference Digest, 62nd DRC (pp. 19-20). [II.A.-4] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2004.1367762