A novel surface-oxidized barrier-SiN cell technology to improve endurance and read-disturb characteristics for gigabit NAND flash memories

A. Goda*, W. Moriyama, H. Hazama, H. Iizuka, K. Shimizu, S. Aritome, Riichiro Shirota

*Corresponding author for this work

Research output: Contribution to journalConference article

6 Scopus citations

Abstract

This paper describes a novel surface-oxidized barrier-SiN cell technology to effect a tenfold improvement in endurance and read disturb characteristics. In conventional memory cells, degradation of tunnel oxides due to barrier-SiN films for Self-Aligned Contact (SAC) limits the scaling of memory cells. The proposed technology overcomes this problem by an additional oxidation process subsequent to barrier-SiN deposition to reduce hydrogen in both SiN film and tunnel oxide. 0.18μm-rule NAND cells fabricated by the proposed technology demonstrate a tenfold improvement in allowable program/erase cycles and read disturb lifetime without any deterioration of other cell properties.

Original languageEnglish
Pages (from-to)771-774
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 2000
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: 10 Dec 200013 Dec 2000

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