A novel surface-oxidized barrier-SiN cell technology to improve endurance and read-disturb characteristics for gigabit NAND flash memories

A. Goda; W. Moriyama; H. Hazama; H. Iizuka; K. Shimizu; S. Aritome; Riichiro Shirota

doi:10.1109/IEDM.2000.904431

A novel surface-oxidized barrier-SiN cell technology to improve endurance and read-disturb characteristics for gigabit NAND flash memories

A. Goda^*, W. Moriyama, H. Hazama, H. Iizuka, K. Shimizu, S. Aritome, Riichiro Shirota

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

This paper describes a novel surface-oxidized barrier-SiN cell technology to effect a tenfold improvement in endurance and read disturb characteristics. In conventional memory cells, degradation of tunnel oxides due to barrier-SiN films for Self-Aligned Contact (SAC) limits the scaling of memory cells. The proposed technology overcomes this problem by an additional oxidation process subsequent to barrier-SiN deposition to reduce hydrogen in both SiN film and tunnel oxide. 0.18μm-rule NAND cells fabricated by the proposed technology demonstrate a tenfold improvement in allowable program/erase cycles and read disturb lifetime without any deterioration of other cell properties.

Original language	English
Pages (from-to)	771-774
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2000.904431
State	Published - 1 Dec 2000
Event	2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States Duration: 10 Dec 2000 → 13 Dec 2000

Access to Document

10.1109/IEDM.2000.904431

Link to publication in Scopus

Fingerprint Dive into the research topics of 'A novel surface-oxidized barrier-SiN cell technology to improve endurance and read-disturb characteristics for gigabit NAND flash memories'. Together they form a unique fingerprint.

Cite this

@article{00d5b53fb8b34fc68d045bb9b13fab37,

title = "A novel surface-oxidized barrier-SiN cell technology to improve endurance and read-disturb characteristics for gigabit NAND flash memories",

abstract = "This paper describes a novel surface-oxidized barrier-SiN cell technology to effect a tenfold improvement in endurance and read disturb characteristics. In conventional memory cells, degradation of tunnel oxides due to barrier-SiN films for Self-Aligned Contact (SAC) limits the scaling of memory cells. The proposed technology overcomes this problem by an additional oxidation process subsequent to barrier-SiN deposition to reduce hydrogen in both SiN film and tunnel oxide. 0.18μm-rule NAND cells fabricated by the proposed technology demonstrate a tenfold improvement in allowable program/erase cycles and read disturb lifetime without any deterioration of other cell properties.",

author = "A. Goda and W. Moriyama and H. Hazama and H. Iizuka and K. Shimizu and S. Aritome and Riichiro Shirota",

year = "2000",

month = dec,

day = "1",

doi = "10.1109/IEDM.2000.904431",

language = "English",

pages = "771--774",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 10-12-2000 Through 13-12-2000",

}

A novel surface-oxidized barrier-SiN cell technology to improve endurance and read-disturb characteristics for gigabit NAND flash memories. / Goda, A.; Moriyama, W.; Hazama, H.; Iizuka, H.; Shimizu, K.; Aritome, S.; Shirota, Riichiro.

In: Technical Digest - International Electron Devices Meeting, 01.12.2000, p. 771-774.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - A novel surface-oxidized barrier-SiN cell technology to improve endurance and read-disturb characteristics for gigabit NAND flash memories

AU - Goda, A.

AU - Moriyama, W.

AU - Hazama, H.

AU - Iizuka, H.

AU - Shimizu, K.

AU - Aritome, S.

AU - Shirota, Riichiro

PY - 2000/12/1

Y1 - 2000/12/1

N2 - This paper describes a novel surface-oxidized barrier-SiN cell technology to effect a tenfold improvement in endurance and read disturb characteristics. In conventional memory cells, degradation of tunnel oxides due to barrier-SiN films for Self-Aligned Contact (SAC) limits the scaling of memory cells. The proposed technology overcomes this problem by an additional oxidation process subsequent to barrier-SiN deposition to reduce hydrogen in both SiN film and tunnel oxide. 0.18μm-rule NAND cells fabricated by the proposed technology demonstrate a tenfold improvement in allowable program/erase cycles and read disturb lifetime without any deterioration of other cell properties.

AB - This paper describes a novel surface-oxidized barrier-SiN cell technology to effect a tenfold improvement in endurance and read disturb characteristics. In conventional memory cells, degradation of tunnel oxides due to barrier-SiN films for Self-Aligned Contact (SAC) limits the scaling of memory cells. The proposed technology overcomes this problem by an additional oxidation process subsequent to barrier-SiN deposition to reduce hydrogen in both SiN film and tunnel oxide. 0.18μm-rule NAND cells fabricated by the proposed technology demonstrate a tenfold improvement in allowable program/erase cycles and read disturb lifetime without any deterioration of other cell properties.

UR - http://www.scopus.com/inward/record.url?scp=0034453429&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2000.904431

DO - 10.1109/IEDM.2000.904431

M3 - Conference article

AN - SCOPUS:0034453429

SP - 771

EP - 774

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 10 December 2000 through 13 December 2000

ER -