This paper describes a novel surface-oxidized barrier-SiN cell technology to effect a tenfold improvement in endurance and read disturb characteristics. In conventional memory cells, degradation of tunnel oxides due to barrier-SiN films for Self-Aligned Contact (SAC) limits the scaling of memory cells. The proposed technology overcomes this problem by an additional oxidation process subsequent to barrier-SiN deposition to reduce hydrogen in both SiN film and tunnel oxide. 0.18μm-rule NAND cells fabricated by the proposed technology demonstrate a tenfold improvement in allowable program/erase cycles and read disturb lifetime without any deterioration of other cell properties.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 2000|
|Event||2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States|
Duration: 10 Dec 2000 → 13 Dec 2000