A novel soft-program for a narrow erased state Vt distribution, read disturbance suppression and over-program annihilation in multilevel cell flash memories

Chih Chieh Yeh*, Tso Hung Fan, Tao Cheng Lu, Ta-Hui Wang, Sam Pan, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In floating gale flash memories, anode hot hole injection induced by the channel FN erase will result in tunnel oxide degradation, severe read disturbance and an abnormally fast program. All of these issues are critical for multilevel cell (MLC) flash memory design, which requires precise threshold voltage placement, good data retentivity and programming controllability. In this paper, a novel soft-program scheme is proposed to narrow the threshold voltage distribution in the first level. Cycling-induced read disturbance and programming inaccuracy are also reduced. This technique is essential for the application of more-than-2-bit MLC flash memories.

Original languageEnglish
Pages (from-to)2044-2049
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number4 B
DOIs
StatePublished - 1 Apr 2003

Keywords

  • Anode hot hole injection
  • Charge separation technique
  • Multilevel cell
  • Over-program
  • Read disturbance
  • Soft-program
  • Threshold voltage distribution

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