A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): Optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI

C. C. Yeh*, W. J. Tsai, T. C. Lu, Y. R. Chen, Fu-Ming Pan, S. H. Gu, Y. Y. Liao, H. L. Kao, T. F. Ou, N. K. Zous, Wen Chi Ting, Ta-Hui Wang, Joseph Ku, Chih Yuan Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET) is proposed for the first time. This three-terminal electroluminescence device uses a SONOS-type device structure, and its process is compatible to standard CMOS devices. Photons are generated by Fowler-Nordheim electron (FN-E) tunnel-injection, band-to-band tunneling induced hot-hole (BTBT-HH) injection, and carrier scattering/trapping/recombination via nitride traps. SiNLET with an effective device area of 0.616 μm 2 is demonstrated for display and optical communication purposes.

Original languageEnglish
Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages1013-1016
Number of pages4
DOIs
StatePublished - 1 Dec 2005
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: 5 Dec 20057 Dec 2005

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2005
ISSN (Print)0163-1918

Conference

ConferenceIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period5/12/057/12/05

Fingerprint Dive into the research topics of 'A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): Optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI'. Together they form a unique fingerprint.

Cite this