A novel SiGe raised source/drain polycrystalline silicon thin-film transistor with improved on-current and larger breakdown voltage

Du Zen Peng*, Ting Chang Chang, Chin Fu Liu, Ping Hung Yeh, Po-Tsun Liu, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A novel poly-Si thin-film transistor with a self-aligned SiGe raised source/drain (SiGe-RSD TFT) has been proposed and fabricated. The SiGe-RSD regions were grown selectively by the ultra-high vacuum chemical vapor deposition (UHVCVD) process designed by us at 550°C. The resultant transistor structure features an ultra-thin active channel region (20 nm) and a self-aligned thick source/drain region (120 nm), and is ideally suited for optimum performance. Significant improvements in electrical characteristics, such as higher turn-on current, lower leakage current and higher drain breakdown voltage have been observed in the SiGe RSD TFT, compared to its conventional TFT counterpart. Moreover, the process is simple and no additional masks are necessary, which is consistent with conventional fabrication processes.

Original languageEnglish
Pages (from-to)1164-1167
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number3
DOIs
StatePublished - 1 Mar 2003

Keywords

  • Polysilicon
  • Raised source drain
  • SiGe
  • Thin-film transistor
  • UHVCVD
  • Ultra thin

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