A novel Si-B diffusion source for p+-poly-Si gate

Tien-Sheng Chao*, Chung Ping Kuo, T. P. Chen, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, we report a novel Si-B diffusion source for p+-poly-Si gate p-metal oxide-semiconductor field effect transistors (pMOSFETs). It is found that boron penetration can be effectively suppressed using this process. AH the electrical properties of the 'MOS capacitors are significantly improved over the conventional BF or B+-implanted samples. This process is very promising for fabrication of future surface-channel p-MOSFETs.

Original languageEnglish
Pages (from-to)3852-3855
Number of pages4
JournalJournal of the Electrochemical Society
Volume146
Issue number10
DOIs
StatePublished - 1 Jan 1999

Fingerprint Dive into the research topics of 'A novel Si-B diffusion source for p<sup>+</sup>-poly-Si gate'. Together they form a unique fingerprint.

Cite this