A novel scheme for fabricating CMOS inverters with poly-Si nanowire channels

Chia Hao Kuo*, Horng-Chih Lin, I. Che Lee, Huang-Chung Cheng, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


A novel complementary metal-oxide-semiconductor inverter with poly-Si nanowire channels is proposed and demonstrated in this letter. The scheme employs a clever tilted-angle implant process in the fabrication; therefore, the formation of the source and drain of both p-channel and n-channel devices requires only one lithographic step. The fabricated n-channel and p-channel field-effect transistors in the inverters show a high on/off current ratio, an acceptable subthreshold swing, and a symmetric driving current, thus enabling the realization of excellent characteristics of the inverters.

Original languageEnglish
Article number6193120
Pages (from-to)833-835
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
StatePublished - 8 May 2012


  • CMOS inverter
  • poly-Si
  • system-on-panel (SoP)
  • thin-film transistor (TFT)

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