A novel rewritable one-time-programming OTP (RW-OTP) realized by dielectric-fuse RRAM devices featuring ultra-high reliable retention and good endurance for embedded applications

H. W. Cheng, E. R. Hsieh*, Z. H. Huang, C. H. Chuang, C. H. Chen, F. L. Li, Y. M. Lo, C. H. Liu, Steve S. Chung

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel concept of OTP has been demonstrated to create another feasibility to allow re-writable capability before storing the data. This OTP is named Rewritable One-time- programming (RW-OTP) memory. With RW-OTP, users can do the test by modifying the contexts repeatedly before finalizing the stored data. To implement the memory cell, it consists of a gate-floated FinFET and an RRAM where a bilayer has been designed as a thicker dielectric layer with resistive-switching property on a thinner dielectric-fuse layer. Moreover, the process of RW-OTP is fully compatible with the state-of- the-art CMOS logic technology. The result shows that the memory cell exhibits high retention and good endurance. With proper use of RW-OTP, the users can not only reduce error jobs cost-efficiently but also can develop various applications for their needs. This memory cell is very promising for embedded applications.

Original languageEnglish
Title of host publication2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538648254
DOIs
StatePublished - 3 Jul 2018
Event2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan
Duration: 16 Apr 201819 Apr 2018

Publication series

Name2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Conference

Conference2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
CountryTaiwan
CityHsinchu
Period16/04/1819/04/18

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    Cheng, H. W., Hsieh, E. R., Huang, Z. H., Chuang, C. H., Chen, C. H., Li, F. L., Lo, Y. M., Liu, C. H., & Chung, S. S. (2018). A novel rewritable one-time-programming OTP (RW-OTP) realized by dielectric-fuse RRAM devices featuring ultra-high reliable retention and good endurance for embedded applications. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 (pp. 1-2). (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2018.8403852