A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array

Mohammed Zackriya, Harish M. Kittur, Albert Chin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 μA due to both low-current RRAM device and circuit interaction, where a novel and simple scheme of a reference point by half selected cell and a differential amplifier (DA) were implemented in the circuit design.

Original languageEnglish
Article number42375
JournalScientific reports
Volume7
DOIs
StatePublished - 10 Feb 2017

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