A novel random telegraph signal method to study program/erase charge lateral spread and retention loss in a SONOS flash memory

Huan Chi Ma*, You Liang Chou, Jung Piao Chiu, Yueh Ting Chung, Tung Yang Lin, Ta-Hui Wang, Yuan Peng Chao, Kuang Chao Chen, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

A novel random telegraph signal (RTS) method is proposed to characterize the lateral distribution of injected charge in program and erase states in a nor-type siliconoxidenitrideoxidesilicon Flash memory. The concept of this method is to use RTS to extract an oxide trap position in the channel and then to use the trap and RTS as internal probe to detect a local channel potential change resulting from injected charge during program/erase. By using this method, the lateral width of the injected charge-induced channel potential barrier is shown to be around 20 nm in channel hot electron (CHE) program. Our method also confirms that Channel Initiated Secondary ELectron (CHISEL) program has a broader injected charge distribution than CHE program. A mismatch of CHE program electrons and band-to-band tunneling erase holes is observed. Program-state Vt retention loss models, charge vertical loss versus lateral migration, are reexamined by using this method. The polarity of a program-state charge distribution along the channel is explored within 1020 program/erase cycles. Nitride charge vertical loss is verified by this method.

Original languageEnglish
Article number5680603
Pages (from-to)623-630
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume58
Issue number3
DOIs
StatePublished - 1 Mar 2011

Keywords

  • Charge lateral distribution
  • random telegraph signal (RTS)
  • retention loss
  • silicon-oxide-nitride-oxide-silicon (SONOS)

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