A novel programming method using a reverse polarity pulse in Flash EEPROMs

Hirohisa Iizuka*, Tetsuo Endoh, Seiichi Aritome, Riichiro Shirota, Fujio Masuoka

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The data retention characteristics for Flash EEPROM degrade after a large number of write and erase cycles due to the increase of the tunnel oxide leakage current. This paper proposes a new write/erase method which uses a reverse polarity pulse after each erase pulse. By using this method, the leakage current can be suppressed. As a result, the read disturb time after 105 cycles write/erase operation is more than 10 times longer in comparison with that of the conventional method. Moreover, using this method, the endurance cycle dependence of the threshold voltage after write and erase operation is also drastically improved.

Original languageEnglish
Pages (from-to)832-835
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE79-C
Issue number6
StatePublished - 1 Jan 1996

Keywords

  • Flash eeprom
  • Hole trap
  • Oxide leakage current
  • Read disturb
  • Reverse polarity pulse

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