A novel program-erasable high-k AlN-Si MIS capacitor

C. H. Lai*, Albert Chin, B. F. Hung, C. F. Cheng, Won Jong Yoo, M. F. Li, Chunxiang Zhu, S. P. McAlister, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


We demonstrate a programmable-erasable MIS capacitor with a single layer high-κ AlN dielectric on Si having a high capacitance density of ∼ 5 fF/μm2. It has low program and erase voltages of +4 and -4 V, respectively. Such an erase function is not available in other single layer Al2O3, AN, or other known high-κ dielectric capacitors, where the threshold voltage (Vth) shifts continuously with voltage. This device exhibits good data retention with a Vth change of only 0.06 V after 10 000 s.

Original languageEnglish
Pages (from-to)148-150
Number of pages3
JournalIEEE Electron Device Letters
Issue number3
StatePublished - 1 Mar 2005


  • Capacitor
  • Erase
  • High-k
  • Program

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