A novel program-erasable high-κ AlN capacitor with memory function

Albert Chin*, C. H. Lai, B. F. Hung, C. F. Cheng, Scan P. McAlister, Chunxiang Zhu, Ming Fu Li, Dim Lee Kwong

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

We demonstrate, for the first time, a novel high-kκ AlN capacitor that is program-erasable at voltages of +4 or -4 V and that has good retention for 1T1C memory. These features are not shown by Al 2O 3, or other capacitors that use only a single high-κ dielectric layer. Good data retention is shown with a threshold shift of only 0.06V after +± 4V program/erase for 10 4 sec.

Original languageEnglish
Title of host publicationProceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004
Pages18-23
Number of pages6
DOIs
StatePublished - 1 Dec 2004
EventProceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004 - Orlando, FL, United States
Duration: 15 Nov 200417 Nov 2004

Publication series

NameProceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004

Conference

ConferenceProceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004
CountryUnited States
CityOrlando, FL
Period15/11/0417/11/04

Keywords

  • Aln
  • Erase
  • High dielectric constant (high κ)
  • Memory
  • Program
  • Retention

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