A novel program-erasable capacitor using high-κ AlN dielectric

C. H. Lai*, M. W. Ma, C. F. Cheng, Albert Chin, S. P. McAlister, C. X. Zhu, M. F. Li, D. L. Kwong

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate, for the first time, a novel high-κ AlN capacitor that can be program-erasable at voltages of ± 4V and that has good retention for 1T1C memory. These features are not shown by Al2O3, or other known single high-κ layer capacitors. Good data retention occurs with a threshold change of only 0.06V after ± 4V P/E for 104s and shows potentially long memory time.

Original languageEnglish
Title of host publicationDevice Research Conference - Conference Digest, 62nd DRC
Pages77-78
Number of pages2
DOIs
StatePublished - 1 Dec 2004
EventDevice Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
Duration: 21 Jun 200423 Jun 2004

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Conference

ConferenceDevice Research Conference - Conference Digest, 62nd DRC
CountryUnited States
CityNotre Dame, IN
Period21/06/0423/06/04

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