A novel process to form cobalt silicided p + poly-Si gates by BF 2 + implantation into bilayered CoSi/a-Si films and subsequent anneal

W. K. Lai*, H. W. Liu, M. H. Juang, N. C. Chen, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A novel process that implants BF 2 + ions into thin bilayered CoSi/a-Si films has been shown to form cobalt silicided p + poly-Si gates with excellent gate oxide integrity and very small flatband shift. The effects of not only using the CoSi layer as an implantation barrier but also keeping the a-Si underlayer during the initial silicide formation both significantly suppress the boron penetration through thin gate oxide.

Original languageEnglish
Pages (from-to)259-261
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number7
DOIs
StatePublished - 1 Jul 1998

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