A novel process to form cobalt silicided p + poly-Si gates by BF 2 + implantation into bilayered CoSi/a-Si films and subsequent anneal

W. K. Lai; H. W. Liu; M. H. Juang; N. C. Chen; Huang-Chung Cheng

doi:10.1109/55.701436

A novel process to form cobalt silicided p ⁺ poly-Si gates by BF ₂ ⁺ implantation into bilayered CoSi/a-Si films and subsequent anneal

W. K. Lai^*, H. W. Liu, M. H. Juang, N. C. Chen, Huang-Chung Cheng

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A novel process that implants BF ₂ ⁺ ions into thin bilayered CoSi/a-Si films has been shown to form cobalt silicided p ⁺ poly-Si gates with excellent gate oxide integrity and very small flatband shift. The effects of not only using the CoSi layer as an implantation barrier but also keeping the a-Si underlayer during the initial silicide formation both significantly suppress the boron penetration through thin gate oxide.

Original language	English
Pages (from-to)	259-261
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	19
Issue number	7
DOIs	https://doi.org/10.1109/55.701436
State	Published - 1 Jul 1998

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abstract = " A novel process that implants BF 2 + ions into thin bilayered CoSi/a-Si films has been shown to form cobalt silicided p + poly-Si gates with excellent gate oxide integrity and very small flatband shift. The effects of not only using the CoSi layer as an implantation barrier but also keeping the a-Si underlayer during the initial silicide formation both significantly suppress the boron penetration through thin gate oxide. ",

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AU - Juang, M. H.

AU - Chen, N. C.

AU - Cheng, Huang-Chung

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AB - A novel process that implants BF 2 + ions into thin bilayered CoSi/a-Si films has been shown to form cobalt silicided p + poly-Si gates with excellent gate oxide integrity and very small flatband shift. The effects of not only using the CoSi layer as an implantation barrier but also keeping the a-Si underlayer during the initial silicide formation both significantly suppress the boron penetration through thin gate oxide.

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