Abstract
A novel process that implants BF 2 + ions into thin bilayered CoSi/a-Si films has been shown to form cobalt silicided p + poly-Si gates with excellent gate oxide integrity and very small flatband shift. The effects of not only using the CoSi layer as an implantation barrier but also keeping the a-Si underlayer during the initial silicide formation both significantly suppress the boron penetration through thin gate oxide.
Original language | English |
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Pages (from-to) | 259-261 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 19 |
Issue number | 7 |
DOIs | |
State | Published - 1 Jul 1998 |