A Novel Process for High-Performance Schottky Barrier PMOS

Bing-Yue Tsui, Mao Chieh Chen

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A novel process for high-performance rinsed asymmetric Schottky barrier PMOS transistors with a Schottky barrier junction source and a P-N junction drain is proposed. PtSi is used to form the source Schottky junction. No spacer oxide is necessary for this process to isolate the poly-Si gate and the source PtSi; thus the source PtSi may directly contact the inverted channel. Measured results show that the new Schottky barrier PMOS can circumvent the drawback of the conventional Schottky barrier PMOS, such as low drain driving current, poor transconductance, and high drain to substrate leakage current.

Original languageEnglish
Pages (from-to)1456-1459
Number of pages4
JournalJournal of the Electrochemical Society
Volume136
Issue number5
DOIs
StatePublished - 1 Jan 1989

Fingerprint Dive into the research topics of 'A Novel Process for High-Performance Schottky Barrier PMOS'. Together they form a unique fingerprint.

Cite this