A novel polysilicon field-enhanced nanowire thin-film transistor with the TiN-hafnia-nitride-vacuum-silicon (THNVAS) structure for nonvolatile memory applications

Chun Yu Wu, Ta Chuan Liao, Yen Ting Liu, Ming H. Yu, Huang-Chung Cheng*

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

A novel poly-Si ?eld-enhanced nanowire (FEN) TFT memory with the TiN-hafnia-nitride-vacuumsilicon (THNVAS) structure fabricated simply via a sidewall spacer formation has been presented. The THNVAS devices with superior memory performance were demonstrated by introducing the hafnia as blocking oxide and the vacuum, the lowest-k in nature, as tunneling layer. According to the simulation results, the memory device with oxide/nitride/vacuum gate dielectric exhibited a higher local electric-?eld of 4.72 × 10 7 V/cm as compared to 2.55 × 10 7 V/cm for the conventional oxide/nitride/oxide counterpart. In addition, the electric-?eld of tunneling layer could be further increased to 7.06 × 10 7 V/cm while the blocking oxide was substituted for hafnia. The experimental data showed that THNVAS possessed a greater threshold voltage shift of 3.75 V in 10 ms at V GS = 12 V, whereas the shift only 2.5 V for THNOS ones. These considerable improvements for THNVAS devices could be attributed to the evident ?eld enhancement across the vacuum tunneling layer. Furthermore, owing to the empty feature of vacuum tunneling layer, the THNVAS demonstrated much-improved endurance performance and preferable data retention property. Hence, such excellent characteristics of THNVAS will be an attractive nonvolatile memory for future system-onpanel and 3-D Flash applications.

Original languageEnglish
Pages (from-to)5276-5282
Number of pages7
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number7
DOIs
StatePublished - 1 Jul 2012

Keywords

  • Field-Enhanced Nanowire (FEN)
  • High-k
  • Nonvolatile Memory
  • Poly-Si Thin-Film Transistor (Poly-Si TFT)
  • System-on-Panel (SOP)

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