@inproceedings{700cfe898cba41718af37c04a81117d5,
title = "A novel poly-Si nanowire TFT for nonvolatile memory applications",
abstract = "A novel ploy-Si nanowire TFT-SONOS device configured with independent double-gate structure was fabricated and characterized. The electrical characteristics including programming and erasing properties were studied. Adding an adequate top-gate bias was found to improve the programming efficiency, resulting in larger memory window.",
author = "Hsu, {Hsin Hwei} and Horng-Chih Lin and Huang, {Jian Fu} and Huang, {Tiao Yuan}",
year = "2007",
month = dec,
day = "1",
doi = "10.1109/MTDT.2007.4547618",
language = "English",
isbn = "9781424416561",
series = "Records of the IEEE International Workshop on Memory Technology, Design and Testing",
pages = "55--56",
booktitle = "17th IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2007",
note = "null ; Conference date: 03-12-2007 Through 05-12-2007",
}