A novel planarization of oxide-filled shallow-trench isolation

Juing Yi Cheng*, Tan Fu Lei, Tien-Sheng Chao, Daniel L.W. Yen, B. J. Jin, C. J. Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Two planarization approaches of the oxide-filled trench isolation have been evaluated. Results show that the oxidefilled shallow-trench isolation technology based on a chemical-mechanical polishing (CMP) process is difficult to control and has a poor uniformity. It also results in a dishing effect in wide field regions. On the other hand, a new planarization process can achieve an excellent uniformity and fully planar surface by using a combination of a masking polysilicon layer based on a CMP process, selective wet etching for oxide refill on active regions, short-time CMP process for oxide refill, and reactive ion etching etchback. Results also show that the high breakdown yield of the gate oxide and the low leakage current of the n+/p junction diodes with the novel planarization process demonstrates extremely low defect density from this process. This new process is a very promising candidate for oxide-filled shallow-trench isolation.

Original languageEnglish
Pages (from-to)315-320
Number of pages6
JournalJournal of the Electrochemical Society
Volume144
Issue number1
DOIs
StatePublished - 1 Jan 1997

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