A novel pixel design for AM-OLED displays using nanocrystalline silicon TFTs

Chen Wei Lin*, Chia-Tso Chao, Yen Shih Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

This paper presents a novel pixel design for active matrix organic light emitting diode (AM-OLED) displays using nanocrystalline silicon thin-film transistors (TFTs). The proposed pixel design can effectively reduce the variation of its stored display data caused by the leakage current of nanocrystalline silicon TFTs, which can in turn increase the contrast resolution of AM-OLED displays. With a proper setting of its capacitors, the proposed pixel design can achieve a 5.55× reduction on its display-data variation while requiring only a 1.15× write time when compared to the typical pixel design. The aperture ratio resulting from the layout of the proposed pixel design can also be maintained above 40%, which satisfies the specification of most AM-OLED displays. A series of simulations as well as measurement results are provided to validate the effectiveness of the proposed pixel design.

Original languageEnglish
Article number5428768
Pages (from-to)939-952
Number of pages14
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume19
Issue number6
DOIs
StatePublished - 1 Jun 2011

Keywords

  • Active Matrix Organic Light Emitting Diode (AM-OLED)
  • coupling effect
  • microcrystalline thin-film transistor (TFT)
  • nanocrystalline TFT

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