A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications

Chih Chieh Yeh*, Ta-Hui Wang, Wen Jer Tsai, Tao Cheng Lu, Ming Shiang Chen, Yi Ying Liao, Wenchi Ting, Yen Hui Joseph Ku, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A novel programming by hot-hole injection nitride electron storage (PHINES) Flash memory technology is developed. The memory bit size of 0.046 μm2 is fabricated based on 0.13-μm technology. PHINES cell uses a nitride trapping storage cell structure. Fowler-Nordheim (FN) injection is performed to raise Vt in erase while programming is done by lowering a local Vt through band-to-band tunneling-induced hot hole (BTBT HH) injection. Two-bits-per-cell feasibility, low-power and high-speed program/erase, good endurance and data retentivity make it a promising candidate for Flash EEPROM technology in gigabit era applications.

Original languageEnglish
Pages (from-to)541-546
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume52
Issue number4
DOIs
StatePublished - 1 Apr 2005

Keywords

  • Band-to-band hot hole (BTB HH)
  • Charge gain
  • Charge loss
  • EEPROM
  • Flash memory
  • Flash memory cell
  • Nitride storage
  • Over-erasure

Fingerprint Dive into the research topics of 'A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications'. Together they form a unique fingerprint.

Cite this