A novel pH-dependent drift improvement method for zirconium dioxide gated pH-ion sensitive field effect transistors

Kow-Ming Chang, Chih Tien Chang, Kuo Yi Chao, Chia Hung Lin

Research output: Contribution to journalArticle

26 Scopus citations

Abstract

A novel compensation method for Zirconium dioxide gated Ion Sensitive Field Effect Transistors (ISFETs) to improve pH-dependent drift was demonstrated. Through the sequential measurements for both the n-channel and p-channel ISFETs, 75-100% pHdependent drift could be successfully suppressed for the first seven hours. As a result, a nearly constant drift rate versus pH value was obtained, which increases the accuracy of pH measurements. Meanwhile, the drawback of the hyperbolic-like change with time of the common drift behavior for ISFETs was improved. A state-of-the-art integrated scheme adopting this method was also illustrated.

Original languageEnglish
Pages (from-to)4643-4654
Number of pages12
JournalSensors
Volume10
Issue number5
DOIs
StatePublished - 1 May 2010

Keywords

  • Drift
  • ISFET
  • ZrO
  • pH-dependent

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