A novel p-n-diode structure of SONOS-type TFT NVM with embedded silicon nanocrystals

Tsung Yu Chiang*, William Cheng Yu Ma, Yi Hong Wu, Kuan Ti Wang, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

In this letter, for the first time, a novel p-n-diode (PND) structure of SONOS-type thin-film transistor (TFT) nonvolatile memory (NVM) with embedded silicon nanocrystals (Si-NCs) in the silicon nitride layer using an in situ method is successfully demonstrated. This novel structure has many advantages, including high density and suitability for 3-D circuit integration. Hot-electron injection and hot-hole injection are used as the program and erase methods, respectively. The sensing current of the three-terminal PND-TFT NVM is 10 -7 A by the band-to-band tunneling current. A much larger memory window >12V) and good data retention time (108s for 12% charge loss) are exhibited. The device appears to have great potential for system-on-panel applications.

Original languageEnglish
Article number5565385
Pages (from-to)1239-1241
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number11
DOIs
StatePublished - 1 Nov 2010

Keywords

  • Band-to-band tunneling (BTBT)
  • nonvolatile memory (NVM)
  • p-n diode (PND)
  • silicon nanocrystal (Si-NC)
  • thin-film transistor (TFT)

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