In this letter, for the first time, a novel p-n-diode (PND) structure of SONOS-type thin-film transistor (TFT) nonvolatile memory (NVM) with embedded silicon nanocrystals (Si-NCs) in the silicon nitride layer using an in situ method is successfully demonstrated. This novel structure has many advantages, including high density and suitability for 3-D circuit integration. Hot-electron injection and hot-hole injection are used as the program and erase methods, respectively. The sensing current of the three-terminal PND-TFT NVM is 10 -7 A by the band-to-band tunneling current. A much larger memory window >12V) and good data retention time (108s for 12% charge loss) are exhibited. The device appears to have great potential for system-on-panel applications.
- Band-to-band tunneling (BTBT)
- nonvolatile memory (NVM)
- p-n diode (PND)
- silicon nanocrystal (Si-NC)
- thin-film transistor (TFT)