A novel one transistor resistance-gate nonvolatile memory

Steve S. Chung, E. R. Hsieh, S. P. Yang, C. H. Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

For the first time, we propose a one transistor resistance-gate nonvolatile memory (RG-NVM) which comprises a simple MIM structure on top of the transistor gate while readout is taken from the transistor Vth or Id, similar to that of flash memory. A bilayer MIM is preferable for quality performance. The program/erase operation of the memory is made by the edge-tunneling between source/drain and the top gate. Results demonstrated that this memory exhibits good endurance, retention, and can solve the sneak path issues of conventional crossbar ReRAM.

Original languageEnglish
Title of host publication74th Annual Device Research Conference, DRC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509028276
DOIs
StatePublished - 22 Aug 2016
Event74th Annual Device Research Conference, DRC 2016 - Newark, United States
Duration: 19 Jun 201622 Jun 2016

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2016-August
ISSN (Print)1548-3770

Conference

Conference74th Annual Device Research Conference, DRC 2016
CountryUnited States
CityNewark
Period19/06/1622/06/16

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  • Cite this

    Chung, S. S., Hsieh, E. R., Yang, S. P., & Chuang, C. H. (2016). A novel one transistor resistance-gate nonvolatile memory. In 74th Annual Device Research Conference, DRC 2016 [7548507] (Device Research Conference - Conference Digest, DRC; Vol. 2016-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2016.7548507