A novel numerical approach to heterojunction bipolar transistors circuit simulation

Yi-Ming Li*, Kuen Yu Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


In this paper we present a novel computational method for calculating the heterojunction bipolar transistor (HBT) physical characteristics in the time domain. To calculate the HBT high frequency properties, the Gummel-Poon equivalent circuit model is applied to replace the HBT in the circuit and a set of governing ordinary differential equations (ODEs) is formulated. We directly decouple the system ODEs and solve each decoupled ODE with the monotone iterative method in the time domain. This solution methodology proposed here has been applied to semiconductor device simulation by us earlier, and we find this method for the HBT simulation has good accuracy and converges globally. Compared with the HSPICE circuit simulator results, our results present the accuracy, efficiency, and robustness of the method.

Original languageEnglish
Pages (from-to)307-316
Number of pages10
JournalComputer Physics Communications
Issue number3
StatePublished - 15 May 2003


  • Computer simulation
  • HBT
  • Monotone iterative method
  • ODE

Fingerprint Dive into the research topics of 'A novel numerical approach to heterojunction bipolar transistors circuit simulation'. Together they form a unique fingerprint.

Cite this