A novel trapping-nitride-based non-volatile memory cell by using a gated-diode structure is proposed. Fowler-Nordheim (FN) electron injection and band-to-band-tunneling induced hot-hole (BTBT HH) injection are utilized as the erase and program methods, respectively. BTBT current modulated by the trapped charges is the sensing signal to distinguish the cell's bit state. This cell structure overcomes the channel-length related drawbacks in convention field-effect-transistor (FET)-based cells. Furthermore, its array architecture and bias methods can relieve the complex word-line (WL) bias schemes and program-inhibit techniques used in NAND-type arrays. Good program/erase characteristics and reliability are also presented.