A novel NAND-type PHINES nitride trapping storage flash memory cell with physically 2-bits-per-cell storage, and a high programming throughput for mass storage applications

C. C. Yeh, Ta-Hui Wang, Y. Y. Liao, W. J. Tsai, T. C. Lu, M. S. Chen, Y. R. Chen, K. F. Chen, Z. T. Han, M. S. Wong, S. M. Hsu, N. K. Zous, T. F. Ou, Wenchi Ting, Joseph Ku, Chih Yuan Lu

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations

Fingerprint Dive into the research topics of 'A novel NAND-type PHINES nitride trapping storage flash memory cell with physically 2-bits-per-cell storage, and a high programming throughput for mass storage applications'. Together they form a unique fingerprint.

Engineering & Materials Science