A novel NAND-type PHINES nitride trapping storage flash memory cell with physically 2-bits-per-cell storage, and a high programming throughput for mass storage applications

C. C. Yeh, Ta-Hui Wang, Y. Y. Liao, W. J. Tsai, T. C. Lu, M. S. Chen, Y. R. Chen, K. F. Chen, Z. T. Han, M. S. Wong, S. M. Hsu, N. K. Zous, T. F. Ou, Wenchi Ting, Joseph Ku, Chih Yuan Lu

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations

Abstract

A novel NAND-type PHINES nitride trapping storage flash memory cell is proposed for the first time. PHINES memory cells use a SONOS cell structure, and are arranged in a modified NAND array. FN electron injection and band-to-band (BTB) hot-hole (HH) injection are utilized as the erase and the program operations, respectively. Read is performed by a novel BTB current sensing scheme. Physically 2-bits-per-cell storage, low power operation, and a high programming throughput are demonstrated.

Original languageEnglish
Article number1469234
Pages (from-to)116-117
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Volume2005
DOIs
StatePublished - 1 Dec 2005
Event2005 Symposium on VLSI Technology - Kyoto, Japan
Duration: 14 Jun 200514 Jun 2005

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