Abstract
A novel NAND-type PHINES nitride trapping storage flash memory cell is proposed for the first time. PHINES memory cells use a SONOS cell structure, and are arranged in a modified NAND array. FN electron injection and band-to-band (BTB) hot-hole (HH) injection are utilized as the erase and the program operations, respectively. Read is performed by a novel BTB current sensing scheme. Physically 2-bits-per-cell storage, low power operation, and a high programming throughput are demonstrated.
Original language | English |
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Article number | 1469234 |
Pages (from-to) | 116-117 |
Number of pages | 2 |
Journal | Digest of Technical Papers - Symposium on VLSI Technology |
Volume | 2005 |
DOIs | |
State | Published - 1 Dec 2005 |
Event | 2005 Symposium on VLSI Technology - Kyoto, Japan Duration: 14 Jun 2005 → 14 Jun 2005 |