A novel multiple-gate polycrystalline silicon nanowire transistor featuring an inverse - T gate

Horng-Chih Lin*, Hsing H. Hsu, Chun Jung Su, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

A novel multiple-gate field-effect transistor with poly-Si nanowire (NW) channels is proposed and fabricated using a simple process flow. In the proposed structure, poly-Si NW channels are formed with sidewall spacer etching technique, and are surrounded by an inverse-T gate and a top gate. When the two gates are connected together to drive the NW channels, dramatic performance enhancement as compared with the cases of single-gate operation is observed. Moreover, subthreshold swing as low as 103 mV/dec at Vd = 2 V is recorded. Function of using the top gate bias to modulate the threshold voltage of device operation driven by the inverse-T gate biases is also investigated in this letter.

Original languageEnglish
Pages (from-to)718-720
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number7
DOIs
StatePublished - 1 Jul 2008

Keywords

  • Field-effect transistor
  • Multiple gate (MG)
  • Nanowire (NW)
  • Poly-Si

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