A novel methodology for extracting effective density-of-states in poly-Si thin-film transistors

Horng-Chih Lin*, K. L. Yeh, M. H. Lee, Y. C. Su, T. Y. Huang, S. W. Shen, H. Y. Lin

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

A novel methodology that greatly simplifies the procedure of extracting the effective density-of-states (DOS) in polycrystalline-Si thin-film transistors (poly-Si TFTs) is proposed and demonstrated. The characterization is performed on a Schottky barrier (SB) TFT with electrical source/drain extensions induced by a field-plate. Only one single device and two simple subthreshold I-V measurements at room temperature are needed for full band-gap DOS extraction. Impacts of different process treatments are clearly resolved using this methodology.

Original languageEnglish
Pages (from-to)781-784
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 1 Dec 2004
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 13 Dec 200415 Dec 2004

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