A novel methodology that greatly simplifies the procedure of extracting the effective density-of-states (DOS) in polycrystalline-Si thin-film transistors (poly-Si TFTs) is proposed and demonstrated. The characterization is performed on a Schottky barrier (SB) TFT with electrical source/drain extensions induced by a field-plate. Only one single device and two simple subthreshold I-V measurements at room temperature are needed for full band-gap DOS extraction. Impacts of different process treatments are clearly resolved using this methodology.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting, IEDM|
|State||Published - 1 Dec 2004|
|Event||IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States|
Duration: 13 Dec 2004 → 15 Dec 2004