A Novel Method of MOSFET Series Resistance Extraction Featuring Constant Mobility Criteria and Mobility Universality

Da Wen Lin, Ming-Lung Cheng, Shyh-Wei Wang, Chung-Cheng Wu, Ming-Jer Chen

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

A method of MOSFET series resistance extraction is established in this paper. The core of this method relies on the constant mobility criteria, while for different gate lengths, it preserves the shape of universal mobility curves in the high-vertical-field regime. Consequently, the series resistance of a MOSFET can be extracted in an analytical and self-consistent manner, achieved without the knowledge of the gate oxide thickness, channel length, channel doping, or channel stress. Reasonable values of extracted series resistance are demonstrated in a wide range of gate length. Technology computer-aided design simulation further corroborates the validity of the proposed method, particularly for devices with heavily doped source/drain extensions. The constant mobility criteria with respect to the bulk charge linearization coefficient are also verified.
Original languageEnglish
Pages (from-to)890-897
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume57
Issue number4
DOIs
StatePublished - Apr 2010

Keywords

  • MOSFET; series resistance; universal mobility
  • ELECTRON-MOBILITY; CHANNEL-LENGTH; SI MOSFETS; INVERSION; MODEL; ACCUMULATION; TRANSISTORS

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