A Novel Low-Temperature Cu-Cu Direct Bonding with Cr Wetting Layer and Au Passivation Layer

Demin Liu, Po Chih Chen, Kuan-Neng Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, Cu-Cu direct bonding at the ultra-low bonding temperature has been successfully demonstrated by using the Cr/Au layer, which can protect Cu from oxidation before the thermocompression bonding (TCB) process and greatly improve the diffusion of Cu atoms into the surface during the thermal process. The bonding quality has been carefully investigated by analyzing Auger depth, observing the SAT, AFM, SEM images, and measuring electrical performance of the samples. In addition, the mechanical test and reliability test have been performed to verify the reliability of the novel structure with the Cr/Au layer in this study.

Original languageEnglish
Title of host publicationProceedings - IEEE 70th Electronic Components and Technology Conference, ECTC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1322-1327
Number of pages6
ISBN (Electronic)9781728161808
DOIs
StatePublished - Jun 2020
Event70th IEEE Electronic Components and Technology Conference, ECTC 2020 - Orlando, United States
Duration: 3 Jun 202030 Jun 2020

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2020-June
ISSN (Print)0569-5503

Conference

Conference70th IEEE Electronic Components and Technology Conference, ECTC 2020
CountryUnited States
CityOrlando
Period3/06/2030/06/20

Keywords

  • 3D IC
  • bonding
  • chip-to-chip
  • low temperature
  • wafer-to-wafer

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