A novel ion-bombarded and plasma-passivated charge storage layer for SONOS-type nonvolatile memory

Sheng Hsien Liu*, Wen Luh Yang, Chi Chang Wu, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

A novel technique combination of ion bombardment (IB) and NH 3 plasma treatment (PT) has been presented to yield a highly effective charge storage layer for Si/SiO2/Si3N4/SiO2/Si (SONOS)-type nonvolatile memory applications. The IB technique creates additional trap sites within the charge storage layer strikingly to enhance the charge trapping/detrapping efficiency of the storage layer, and the NH 3 PT passivates shallow trap sites significantly to improve reliability characteristics. The distribution of trap sites corresponding with various energy levels is clearly described by discharge-based multipulse analysis. As compared with the control sample (without IB and NH 3 PT), the ion-bombarded and NH 3-plasma- passivated memory device has faster program/erase speeds and larger memory window. In addition, the competent reliability properties of the ion-bombarded and NH 3-plasma-passivated memory, such as good endurance, long data retention, and acceptable disturbance, were also demonstrated in this letter.

Original languageEnglish
Article number6280616
Pages (from-to)1393-1395
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number10
DOIs
StatePublished - 29 Aug 2012

Keywords

  • Discharge-based multipulse (DMP)
  • Flash memory
  • NH plasma treatment (PT)
  • ion bombardment (IB)
  • metal/Al2O3/Si3N4/SiO2/Si (MANOS)

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