In this paper, we have developed an interpretation of transistor S-parameters by poles and zeros. The results from our proposed method agreed well with experimental data from GaAs FETs and Si MOSFET's. The concept of source-series feedback was employed to analyze a transistor circuit set up for the measurement of the S-parameters. Our method can describe the frequency responses of all transistor S-parameters very easily and the calculated S-parameters are scalable with device sizes. It was also found that the long-puzzled kink phenomenon of S22 observed in a Smith chart can be explained by the poles and zeros of S22-.
|Number of pages||4|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|State||Published - 1 Dec 2001|