A novel interpretation of transistor S-Parameters by poles and zeros for RF 1C circuit design

Shey Shi Lu*, Chin-Chun Meng, To Wei Chen, Hsiao Chin Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

In this paper, we have developed an interpretation of transistor S-parameters by poles and zeros. The results from our proposed method agreed well with experimental data from GaAs FETs and Si MOSFET's. The concept of source-series feedback was employed to analyze a transistor circuit set up for the measurement of the S-parameters. Our method can describe the frequency responses of all transistor S-parameters very easily and the calculated S-parameters are scalable with device sizes. It was also found that the long-puzzled kink phenomenon of S22 observed in a Smith chart can be explained by the poles and zeros of S22-.

Original languageEnglish
Pages (from-to)406-409
Number of pages4
JournalIEEE Transactions on Microwave Theory and Techniques
Volume49
Issue number2
DOIs
StatePublished - 1 Dec 2001

Keywords

  • Poles
  • S-parameters
  • Transistors
  • Zeros

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