Abstract
This study proposes a novel packaging structure for vertical thin-GaN LED applications by integration of LED chip and silicon-based packaging process. The vertical thin film LED is directly mounted on package submount. The shortest thermal path structure from junction to package submount achieves the lowest thermal resistance of 1.65 K/W for LED package. Experimental results indicate that low thermal resistance significant improved forward current up to 4.6A with 1.125 × 1.125 mm2 LED chip size.
| Original language | English |
|---|---|
| Journal | Optics Express |
| Volume | 22 |
| Issue number | SUPPL. 3 |
| DOIs | |
| State | Published - 1 Jan 2014 |
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Wen, S. Y., Hu, H. L., Tsai, Y. J., Hsu, C. P., Lin, R. C., & Horng, R-H. (2014). A novel integrated structure of thin film GaN LED with ultra-low thermal resistance. Optics Express, 22(SUPPL. 3). https://doi.org/10.1364/OE.22.00A601