A novel integrated structure of thin film GaN LED with ultra-low thermal resistance

Shih Yi Wen; Hung Lieh Hu; Yao Jun Tsai; Chen Peng Hsu; Re Ching Lin; Ray-Hua Horng

doi:10.1364/OE.22.00A601

A novel integrated structure of thin film GaN LED with ultra-low thermal resistance

Shih Yi Wen, Hung Lieh Hu, Yao Jun Tsai, Chen Peng Hsu, Re Ching Lin, Ray-Hua Horng

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

This study proposes a novel packaging structure for vertical thin-GaN LED applications by integration of LED chip and silicon-based packaging process. The vertical thin film LED is directly mounted on package submount. The shortest thermal path structure from junction to package submount achieves the lowest thermal resistance of 1.65 K/W for LED package. Experimental results indicate that low thermal resistance significant improved forward current up to 4.6A with 1.125 × 1.125 mm2 LED chip size.

Original language	English
Journal	Optics Express
Volume	22
Issue number	SUPPL. 3
DOIs	https://doi.org/10.1364/OE.22.00A601
State	Published - 1 Jan 2014

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title = "A novel integrated structure of thin film GaN LED with ultra-low thermal resistance",

abstract = "This study proposes a novel packaging structure for vertical thin-GaN LED applications by integration of LED chip and silicon-based packaging process. The vertical thin film LED is directly mounted on package submount. The shortest thermal path structure from junction to package submount achieves the lowest thermal resistance of 1.65 K/W for LED package. Experimental results indicate that low thermal resistance significant improved forward current up to 4.6A with 1.125 × 1.125 mm2 LED chip size.",

author = "Wen, {Shih Yi} and Hu, {Hung Lieh} and Tsai, {Yao Jun} and Hsu, {Chen Peng} and Lin, {Re Ching} and Ray-Hua Horng",

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AU - Wen, Shih Yi

AU - Hu, Hung Lieh

AU - Tsai, Yao Jun

AU - Hsu, Chen Peng

AU - Lin, Re Ching

AU - Horng, Ray-Hua

PY - 2014/1/1

Y1 - 2014/1/1

N2 - This study proposes a novel packaging structure for vertical thin-GaN LED applications by integration of LED chip and silicon-based packaging process. The vertical thin film LED is directly mounted on package submount. The shortest thermal path structure from junction to package submount achieves the lowest thermal resistance of 1.65 K/W for LED package. Experimental results indicate that low thermal resistance significant improved forward current up to 4.6A with 1.125 × 1.125 mm2 LED chip size.

AB - This study proposes a novel packaging structure for vertical thin-GaN LED applications by integration of LED chip and silicon-based packaging process. The vertical thin film LED is directly mounted on package submount. The shortest thermal path structure from junction to package submount achieves the lowest thermal resistance of 1.65 K/W for LED package. Experimental results indicate that low thermal resistance significant improved forward current up to 4.6A with 1.125 × 1.125 mm2 LED chip size.

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A novel integrated structure of thin film GaN LED with ultra-low thermal resistance

Abstract

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