A novel hot-electron programming method in a buried diffusion bit-line SONOS memory by utilizing nonequilibrium charge transport

Ta-Hui Wang*, Chun Jung Tang, C. W. Li, Chih Hsiung Lee, T. F. Ou, Yao Wen Chang, Wen Jer Tsai, Tao Cheng Lu, K. C. Chen, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We propose a new hot-electron programming method with a low drain-to-source voltage in a buried-diffusion (BD) bit-line SONOS memory array. In this method, channel electrons are preaccelerated in a cell preceding a program cell. For a small bit-line width, some energetic electrons will traverse an n + BD region and enter a program cell with residual energy due to nonequilibrium transport. Our measurement result shows that this residual energy can significantly enhance hot-electron programming efficiency even at a VV ds of 2.5 V. The concept of this method is verified by means of a Monte Carlo analysis. Our study shows that this method is more effective as a bit-line width reduces.

Original languageEnglish
Pages (from-to)165-167
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number2
DOIs
StatePublished - 1 Jan 2009

Keywords

  • Low V
  • New hot-electron programming
  • SONOS

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