In this letter, a novel high-performance poly-silicon thin-film transistor (poly-Si TFT) with a self-aligned thicker sub-gate oxide near the drain/source regions is proposed. Poly-Si TFTs with tiffs new structure have been successfully fabricated and the results demonstrate a higher on-off current ratio of 5.9 × 106 and also shows the off-state leakage current 100 times lower than those of the conventional ones at VGS = -15 V and VDS = 10 V. Only four photo-masking steps are required and fully compatible with the conventional TFT fabrication processes. This novel structure is a good candidate for the further high-performance large-area device applications.
- On-off current ratio
- Photo-masking steps
- Poly-silicon thin-film transistor
- Self-aligned thicker sub-gate oxide