A novel high-k gate dielectric HfLaO for next generation CMOS technology

Ming Fu Li*, X. P. Wang, H. Y. Yu, C. X. Zhu, Albert Chin, A. Y. Du, J. Shao, W. Lu, X. C. Shen, Patricia Liu, Steven Hung, Patrick Lo, D. L. Kwong

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The physical and electrical characteristics of high-k (HK) gate dielectric HfLaO were systematically investigated. Incorporation of La in HfO2 can raise the film crystallization temperature from 400°C to 900°C Moreover, NMOSFETs fabricated with HfLaO gate dielectric exhibit superior electrical performances in terms of threshold voltage (Vth), bias temperature instability (BTI), channel electron mobility and gate leakage current compared to those fabricated with HfO2 dielectric. Particularly, we also report that the effective work function (EWF) of metal gate (MG) can be tuned to a wide enough range to fulfill the requirement of bulk CMOSFETs by employing HfLaO dielectric and n- and p-type metal gates respectively. These advantages are correlated to die enhanced thermal stability and reduction of oxygen vacancy density in HfLaO compared to HfO2, making it a promising high-k gate dielectric to replace SiO2 and SiON to meet the ITRS requirements. Finally, a possible dual metal gate CMOS integration process is proposed.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages372-375
Number of pages4
ISBN (Print)1424401615, 9781424401611
DOIs
StatePublished - 1 Jan 2006
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 23 Oct 200626 Oct 2006

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

ConferenceICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period23/10/0626/10/06

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