A novel electrically tunable RF inductor with ultra-low power consumption

Ming Hsiang Cho*, Lin-Kun Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this study, we propose for the first time an electrically and continuously tunable RF inductor using grounded metal oxide semiconductor (MOS) transistor as a control device. By adjusting the output resistance of the grounded MOSFET, the ground-return current can lead to a significant variation in series inductance. This proposed inductor structure was implemented in a standard CMOS process and characterized up to 30 GHz, which demonstrates maximum inductance variations of 32% and 58% at 5.8 and 18 GHz, respectively. The dc power consumption of the proposed design is kept within 50 μW over the entire tuning range.

Original languageEnglish
Article number4469927
Pages (from-to)242-244
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume18
Issue number4
DOIs
StatePublished - 1 Apr 2008

Keywords

  • Eddy current
  • Inductor
  • Metal oxide semiconductor field effect transistor (MOSFET)
  • Radio frequency (RF)
  • Silicon
  • Tunable

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