A novel double-gated nanowire TFT and investigation of its size dependency

Wei Chen Chen; Chuan Ding Lin; Horng-Chih Lin; Tiao Yuan Huang

doi:10.1109/VTSA.2009.5159320

A novel double-gated nanowire TFT and investigation of its size dependency

Wei Chen Chen^*, Chuan Ding Lin, Horng-Chih Lin, Tiao Yuan Huang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

A simple method for fabricating poly-Si nanowire (NW) TFT with multiple gates is proposed and characterized. In this structure, NW is formed mainly using both anisotropic and highly selective isotropic plasma etching. It is found that when the size of NW is scaled down, double-gated operation provides more improvement. Furthermore, by utilizing this unique independent double-gated configuration, the function of threshold voltage modulation is investigated.

Original language	English
Title of host publication	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages	121-122
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2009.5159320
State	Published - 1 Dec 2009
Event	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan Duration: 27 Apr 2009 → 29 Apr 2009

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Country	Taiwan
City	Hsinchu
Period	27/04/09 → 29/04/09

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10.1109/VTSA.2009.5159320

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Chen, W. C., Lin, C. D., Lin, H-C., & Huang, T. Y. (2009). A novel double-gated nanowire TFT and investigation of its size dependency. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 (pp. 121-122). [5159320] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2009.5159320

@inproceedings{008d0997ede842edbb041e040cd49b84,

title = "A novel double-gated nanowire TFT and investigation of its size dependency",

abstract = "A simple method for fabricating poly-Si nanowire (NW) TFT with multiple gates is proposed and characterized. In this structure, NW is formed mainly using both anisotropic and highly selective isotropic plasma etching. It is found that when the size of NW is scaled down, double-gated operation provides more improvement. Furthermore, by utilizing this unique independent double-gated configuration, the function of threshold voltage modulation is investigated.",

author = "Chen, {Wei Chen} and Lin, {Chuan Ding} and Horng-Chih Lin and Huang, {Tiao Yuan}",

year = "2009",

month = dec,

day = "1",

doi = "10.1109/VTSA.2009.5159320",

language = "English",

isbn = "9781424427857",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "121--122",

booktitle = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09",

note = "null ; Conference date: 27-04-2009 Through 29-04-2009",

}

Chen, WC, Lin, CD, Lin, H-C & Huang, TY 2009, A novel double-gated nanowire TFT and investigation of its size dependency. in 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09., 5159320, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 121-122, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09, Hsinchu, Taiwan, 27/04/09. https://doi.org/10.1109/VTSA.2009.5159320

A novel double-gated nanowire TFT and investigation of its size dependency. / Chen, Wei Chen; Lin, Chuan Ding; Lin, Horng-Chih; Huang, Tiao Yuan.

2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 121-122 5159320 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A novel double-gated nanowire TFT and investigation of its size dependency

AU - Chen, Wei Chen

AU - Lin, Chuan Ding

AU - Lin, Horng-Chih

AU - Huang, Tiao Yuan

PY - 2009/12/1

Y1 - 2009/12/1

N2 - A simple method for fabricating poly-Si nanowire (NW) TFT with multiple gates is proposed and characterized. In this structure, NW is formed mainly using both anisotropic and highly selective isotropic plasma etching. It is found that when the size of NW is scaled down, double-gated operation provides more improvement. Furthermore, by utilizing this unique independent double-gated configuration, the function of threshold voltage modulation is investigated.

AB - A simple method for fabricating poly-Si nanowire (NW) TFT with multiple gates is proposed and characterized. In this structure, NW is formed mainly using both anisotropic and highly selective isotropic plasma etching. It is found that when the size of NW is scaled down, double-gated operation provides more improvement. Furthermore, by utilizing this unique independent double-gated configuration, the function of threshold voltage modulation is investigated.

UR - http://www.scopus.com/inward/record.url?scp=77950145034&partnerID=8YFLogxK

U2 - 10.1109/VTSA.2009.5159320

DO - 10.1109/VTSA.2009.5159320

M3 - Conference contribution

AN - SCOPUS:77950145034

SN - 9781424427857

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 121

EP - 122

BT - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09

Y2 - 27 April 2009 through 29 April 2009

ER -

A novel double-gated nanowire TFT and investigation of its size dependency

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