A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide

T. C. Chang*, S. T. Yan, Y. T. Chen, Po-Tsun Liu, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide is proposed. For lowtemperature oxidation processes, the oxidized SiCO gate stack shows a larger memory window due to the retainable dangling bonds with more Si-C bonding types and less Si-O bonds. Under 5 V write operation of the low-temperature oxidized SiCO stack, a 1.5 V threshold voltage shift is exhibited, which is sufficient for a memory device to define "0" and "1." Also, the lowtemperature oxidation process of the SiCO layer saves the thermal budget for the manufacturing processes of nonvolatile memory devices.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number11
DOIs
StatePublished - 17 Dec 2004

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